Ultrastrong and High Thermal Insulating Porous High-Entropy Ceramics up to 2000 °C.

High mechanical load-carrying capability and thermal insulating performance are crucial to thermal-insulation materials under extreme conditions. However, these features are often difficult to achieve simultaneously in conventional porous ceramics. Here, for the first time, it is reported a multiscale structure design and fast fabrication of 9-cation porous high-entropy diboride ceramics via an ultrafast high-temperature synthesis technique that can lead to exceptional mechanical load-bearing capability and high thermal insulation performance. With the construction of multiscale structures involving ultrafine pores at the microscale, high-quality interfaces between building blocks at the nanoscale, and severe lattice distortion at the atomic scale, the materials with an ≈50% porosity exhibit an ultrahigh compressive strength of up to ≈337 MPa at room temperature and a thermal conductivity as low as ≈0.76 W m-1 K-1. More importantly, they demonstrate exceptional thermal stability, with merely ≈2.4% volume shrinkage after 2000 °C annealing. They also show an ultrahigh compressive strength of ≈690 MPa up to 2000 °C, displaying a ductile compressive behavior. The excellent mechanical and thermal insulating properties offer an attractive material for reliable thermal insulation under extreme conditions.

Revealing the Defect-Dominated Electron Scattering in Mg3Sb2-Based Thermoelectric Materials.

The thermoelectric parameters are essentially governed by electron and phonon transport. Since the carrier scattering mechanism plays a decisive role in electron transport, it is of great significance for the electrical properties of thermoelectric materials. As a typical example, the defect-dominated carrier scattering mechanism can significantly impact the room-temperature electron mobility of n-type Mg3Sb2-based materials. However, the origin of such a defect scattering mechanism is still controversial. Herein, the existence of the Mg vacancies and Mg interstitials has been identified by synchrotron powder X-ray diffraction. The relationship among the point defects, chemical compositions, and synthesis conditions in Mg3Sb2-based materials has been revealed. By further introducing the point defects without affecting the grain size via neutron irradiation, the thermally activated electrical conductivity can be reproduced. Our results demonstrate that the point defects scattering of electrons is important in the n-type Mg3Sb2-based materials.

Pressure and doping effects on the structural stability of thermoelectric BaAg2Te2.

Ternary chalcogenides have attracted great attention for their potential applications in thermoelectric devices. Here, we investigate the pressure and doping effects on the structural stability of BaAg2Te2using first-principles calculations. Imaginary frequencies are observed in the calculated phonon dispersions of the reportedPnmastructure, indicating thatPnmaBaAg2Te2is lattice dynamically unstable at 0 K. Although the imaginary phonon frequencies are small, we find that hydrostatic pressure cannot effectively stabilize the structure. Based on the soft mode at Γ point, a new monoclinic phase with a space group ofP21/cis proposed. Fromab initiomolecular dynamics simulations, theP21/cphase is predicted to transform to thePnmaphase at a low temperature below 100 K. Electron/hole doping effects on the lattice dynamical stability of thePnmaphase are also studied. It is found that hole doping is superior to electron doping in stabilizing thePnmaphase. Further study on the electrical transport properties of thePnmaphase reveals a higher performance alongbaxis than that along the other two directions. This work paves an avenue to better understand the structural stability and electrical transport properties of thermoelectric BaAg2Te2.

Pressure-induced electrides and metallic phases in the Y-Cl system.

Pressure can profoundly change the electronic structure, leading to the formation of new phases and materials with exotic properties. Herein, using evolutionary algorithms and density functional theory, we systematically investigate the behaviour of materials in the yttrium-chlorine binary system under pressure. Electrons are found to be spatially confined at low pressures in yttrium chlorides and tend to form new electrides. In particular, a novel yttrium chloride, Y3Cl2, is predicted to be thermodynamically and lattice dynamically stable at approximately 10 GPa. Further analyses of the electron localization function and partial charge density identify trigonal Y3Cl2as a new 2D high-pressure electride with partially localized electrons contributing to the conduction. By further increasing the pressure, electrons in the yttrium-chlorine binary system tend to delocalize with the electrides decomposing into two new compounds (Y2Cl and YCl2) and a new YCl phase (space groupP63/mmc) above 20 GPa. These newly discovered phases are all metallic in their stable pressure range according to band structure simulations without interstitial electron localization. The discovery of these unconventional yttrium chlorides may inspire strategies to search for low-pressure electrides in other rare-earth halogenide systems.

Pressure-induced Ge2Se3 and Ge3Se4 crystals with low superconducting transition temperatures.

Evolutionary algorithms and density functional theory are applied to investigate the Ge-Se system under pressure. Binary crystalline compounds Ge2Se3 and Ge3Se4 with unconventional stoichiometries are predicted to be energetically and dynamically stable. Ge2Se3 with a space group of R3m(hR5) is predicted to become stable above 5 GPa and exhibit phase transitions at higher pressures. Ge3Se4 is found to become stable from 40 GPa with a body-centred cubic I4[combining macron]3d crystal structure. Moreover, the conventional GeSe compound is predicted to become unstable above 50 GPa. By calculating the electron localization function, we show that electrons become more delocalized in Ge2Se3 as pressure increases. On the basis of band structure and electron-phonon coupling computations, Ge2Se3 and Ge3Se4 are shown to be metallic and exhibit superconducting transitions at low temperatures.

Unveiling a Novel, Cation-Rich Compound in a High-Pressure Pb-Te Binary System.

Because of the common oxidation states of group IV elements (+2 or +4) and group VI elements (-2), 1:1 and 1:2 are two typical stoichiometries found in the IV-VI compounds. Particularly, in the Pb-Te binary system, the 1:1 stoichiometric PbTe is believed to be the only stable compound. Herein, using evolutionary algorithms, density functional theory, a laser-heated diamond anvil cell, and synchrotron X-ray diffraction experiments, we discovered a novel Pb-Te compound with an unexpected stoichiometry of 3:2 above 20 GPa. This tetragonal Pb3Te2 is the one of the very few cation-rich compounds that has ever been discovered in the entire IV-VI binary system. Further analyses based on electron density distribution, electron localization function, and Bader charge have shown that this newly discovered compound has a mixed character of chemical bonding with a decreased ionicity. By further calculating the electron-phonon interaction, Pb3Te2 is predicted to exhibit a superconducting transition at low temperatures. The discovery of Pb3Te2 paves the way for further explorations of other novel cation-rich IV-VI group compounds.

3D charge and 2D phonon transports leading to high out-of-plane ZT in n-type SnSe crystals.

Thermoelectric technology enables the harvest of waste heat and its direct conversion into electricity. The conversion efficiency is determined by the materials figure of merit ZT Here we show a maximum ZT of ~2.8 ± 0.5 at 773 kelvin in n-type tin selenide (SnSe) crystals out of plane. The thermal conductivity in layered SnSe crystals is the lowest in the out-of-plane direction [two-dimensional (2D) phonon transport]. We doped SnSe with bromine to make n-type SnSe crystals with the overlapping interlayer charge density (3D charge transport). A continuous phase transition increases the symmetry and diverges two converged conduction bands. These two factors improve carrier mobility, while preserving a large Seebeck coefficient. Our findings can be applied in 2D layered materials and provide a new strategy to enhance out-of-plane electrical transport properties without degrading thermal properties.

Enhanced Out-of-Plane Electrical Transport in n-Type SnSe Thermoelectrics Induced by Resonant States and Charge Delocalization.

Doping effects of various elements in the boron, carbon, and pnictogen groups on the electronic structure and electrical transport properties of SnSe were studied from first principles. It is identified that Sb and Bi induce significant resonant states near the conduction band minimum, and increase the delocalization of charge density in the out-of-plane direction. Our Boltzmann transport calculations further demonstrate that these doping effects on the electronic structure are related to the simultaneously improved Seebeck coefficient and electrical conductivity. Using the band unfolding technique, we analyze the resonant states in detail based on the effective band structures.

Simultaneous Optimization of Carrier Concentration and Alloy Scattering for Ultrahigh Performance GeTe Thermoelectrics.

In order to locate the optimal carrier concentrations for peaking the thermoelectric performance in p-type group IV monotellurides, existing efforts focus on aliovalent doping, either to increase (in PbTe) or to decrease (in SnTe and GeTe) the hole concentration. The limited solubility of aliovalent dopants usually introduces insufficient phonon scattering for thermoelectric performance maximization. With a decrease in the size of cation, the concentration of holes, induced by cation vacancies in intrinsic compounds, increases rapidly from ≈1018 cm-3 in PbTe to ≈1020 cm-3 in SnTe and then to ≈1021 cm-3 in GeTe. This motivates a strategy here for reducing the carrier concentration in GeTe, by increasing the mean size of cations and vice-versa decreasing the average size of anions through isovalent substitutions for increased formation energy of cation vacancy. A combination of the simultaneously resulting strong phonon scattering due to the high solubility of isovalent impurities, an ultrahigh thermoelectric figure of merit, zT of 2.2 is achieved in GeTe-PbSe alloys. This corresponds to a 300% enhancement in average zT as compared to pristine GeTe. This work not only demonstrates GeTe as a promising thermoelectric material but also paves the way for enhancing the thermoelectric performance in similar materials.

Pressure-Stabilized Tin Selenide Phase with an Unexpected Stoichiometry and a Predicted Superconducting State at Low Temperatures.

Tin-selenium binary compounds are important semiconductors that have attracted much interest for thermoelectric and photovoltaic applications. As tin has a +2 or +4 oxidation state and selenium has an oxidation number of -2, only SnSe and SnSe_{2} have been observed. In this work, we show that the chemical bonding between tin and selenium becomes counterintuitive under pressures. Combining evolutionary algorithms and density functional theory, a novel cubic tin-selenium compound with an unexpected stoichiometry 3∶4 has been predicted and further synthesized in laser-heated diamond anvil cell experiments. Different from the conventional SnSe and SnSe_{2} semiconductors, Sn_{3}Se_{4} is predicted to be metallic and exhibit a superconducting transition at low temperatures. Based on electron density and Bader charge analysis, we show that Sn_{3}Se_{4} has a mixed nature of chemical bonds. The successful synthesis of Sn_{3}Se_{4} paves the way for the discovery of other IV-VI compounds with nonconventional stoichiometries and novel properties.

Enhanced power factor via the control of structural phase transition in SnSe.

Tin selenide has attracted much research interest due to its unprecedentedly high thermoelectric figure of merit (ZT). For real applications, it is desirable to increase the ZT value in the lower-temperature range, as the peak ZT value currently exists near the melting point. It is shown in this paper that the structural phase transition plays an important role in boosting the ZT value of SnSe in the lower-temperature range, as the Cmcm phase is found to have a much higher power factor than the Pnma phase. Furthermore, hydrostatic pressure is predicted to be extremely effective in tuning the phase transition temperature based on ab-initio molecular dynamic simulations; a remarkable decrease in the phase transition temperature is found when a hydrostatic pressure is applied. Dynamical stabilities are investigated based on phonon calculations, providing deeper insight into the pressure effects. Accurate band structures are obtained using the modified Becke-Johnson correction, allowing reliable prediction of the electrical transport properties. The effects of hydrostatic pressure on the thermal transport properties are also discussed. Hydrostatic pressure is shown to be efficient in manipulating the transport properties via the control of phase transition temperature in SnSe, paving a new path for enhancing its thermoelectric efficiency.